TLP521-1可以用到9600～19200；
限流電阻是1K；上拉電阻是1K；

6N137可以到10M；但是6N137需要按照datasheet來接它的外部電路才能達(dá)到10M的速度；

6N137的內(nèi)部和典型電路

光耦合器的增益被稱為晶體管輸出器件的電流傳輸比 (CTR)，其定義是光電晶體管集電極電流與LED正向電流的比率(ICE/IF)。光電晶體管集電極電流與VCE有關(guān)，即集電極和發(fā)射極之間的電壓

 

MICROCOUPLER為高溫應(yīng)用提升功耗性能

飛兆半導(dǎo)體 Muralitharan Samy、Krishnan Ramdass、Robert Krause

光耦合器是具有絕緣安全性及在輸入和輸出之間實現(xiàn)電氣信號隔離功能的器件，其絕緣和噪聲抑制特性來自于采用的機械結(jié)構(gòu)和材料。 光耦合器由一個光源和一個由透明光導(dǎo)管圍繞的感光檢測器組成，并藏于環(huán)氧塑料封裝內(nèi)。光源是紅外LED，用來將電流轉(zhuǎn)換為光。感光檢測器是一個硅光電二極管，作用是將光轉(zhuǎn)換回電流，然后通過集成的晶體管被放大。光耦合器的增益被稱為晶體管輸出器件的電流傳輸比 (CTR)，其定義是光電晶體管集電極電流與LED正向電流的比率(ICE/IF)。光電晶體管集電極電流與VCE有關(guān)，即集電極和發(fā)射極之間的電壓。 額定工作溫度高達(dá)100℃的設(shè)計的出現(xiàn)，使業(yè)界對熱穩(wěn)定性和低驅(qū)動電流的需求飚升。封裝技術(shù)的進(jìn)步也在推動光耦合器封裝的發(fā)展。從DIP (雙列直插式) 轉(zhuǎn)至SOP (小型封裝) 及MFP (微型扁平封裝) 減小了占位面積，提升了光耦合器的熱性能。體積的減小也有助于在工作溫度范圍內(nèi)增加熱存儲和穩(wěn)定性。 飛兆半導(dǎo)體的Microcoupler (FODB100)是無鉛表貼光耦合器，提供高達(dá)125℃的封裝工作溫度。隨著工作溫度的提升，電氣性能和穩(wěn)定性成為重要的課題。面對這些挑戰(zhàn)，新的LED材料被選用以便在規(guī)定的工作溫度范圍內(nèi)提高CTR穩(wěn)定性。AlGaAs (鋁砷化稼) 紅外發(fā)光二極管在一定溫度范圍內(nèi)較GaAs (砷化稼) 紅外發(fā)光二極管具有更好的穩(wěn)定性。AlGaAs LED可于低電流 (最低達(dá)500 A) 下工作。更小型的封裝和更佳的Ired材料使Microcoupler比傳統(tǒng)的光耦合器封裝在較高的工作溫度范圍內(nèi)具有更加穩(wěn)定的電氣性能。

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

還有一種光耦是可控硅型光耦。
例如：moc3063、IL420；
它們的主要指標(biāo)是負(fù)載能力；
例如：moc3063的負(fù)載能力是100mA；IL420是300mA；

上傳IL420的pdf文檔

FEATURES
? High Input Sensitivity IFT=2 mA
? Blocking Voltage, 600 V
? 300 mA On-State Current
? High Static dv/dt 10,000 V/ms
? Inverse Parallel SCRs Provide Commutatingdv/dt >2K V/ms
? Very Low Leakage <10mA
? Isolation Test Voltage from Double


Molded
Package 5300 VAC
RMS
? Small 6-Pin DIP Package
? Underwriters Lab File #E52744
? VDE 0884 Available with Option 1
Maximum Ratings
Emitter
Reverse Voltage ................................................ 6 V
Forward Current ........................................... 60 mA
Surge Current..................................................2.5 A
Power Dissipation.......................................100 mW
Derate from 25°C ................................1.33 mW/°C
Thermal Resistance..................................750°C/W
Detector
Peak Off-State Voltage ...................................600 V
Peak Reverse Voltage ....................................600 V
RMS On-State Current.................................300 mA
Single Cycle Surge............................................ 3 A
Total Power Dissipation ..............................500 mW
Derate from 25°C ..................................6.6 mW/°C
Thermal Resistance...................................150°C/W
Package
Storage Temperature................... –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Lead Soldering Temperature.............. 260°C/5 sec.
Isolation Test Voltage.........................5300 VACRMS


DESCRIPTION
The IL420 consists of a GaAs IRLED optically coupled to a photosensitive
non-zero crossing TRIAC network. The TRIAC consists of two
inverse parallel connected monolithic SCRs. These three semiconductors
are assembled in a six pin 0.3 inch dual in-line package, using high
insulation double molded, over/under leadframe construction.
High input sensitivity is achieved by using an emitter follower phototransistor
and a cascaded SCR predriver resulting in an LED trigger
current of less than 2 mA (DC).
The IL420 uses two discrete SCRs resulting in a commutating dV/dt of
greater than 10KV/ms. The use of a proprietary
dv/dt clamp
results in a
static dV/dt of greater than 10KV/ms. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1 and MT2
of the TRIAC. When conducting, the FET clamps the base of the phototransistor,
disabling the first stage SCR predriver.
The 600 V blocking voltage permits control of off-line voltages up to 240
VAC, with a safety factor of more than two, and is sufficient for as much
as 380 VAC.
The IL420 isolates low-voltage logic from 120, 240, and 380 VAC lines to
control resistive, inductive, or capacitive loads including motors, solenoids,
high current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial controls, office equipment,
and consumer appliances.

還有一種光耦是可控硅型光耦。
例如：moc3063、IL420；
它們的主要指標(biāo)是負(fù)載能力；
例如：moc3063的負(fù)載能力是100mA；IL420是300mA；

上傳IL420的pdf文檔

FEATURES
? High Input Sensitivity IFT=2 mA
? Blocking Voltage, 600 V
? 300 mA On-State Current
? High Static dv/dt 10,000 V/ms
? Inverse Parallel SCRs Provide Commutatingdv/dt >2K V/ms
? Very Low Leakage <10mA
? Isolation Test Voltage from Double


Molded
Package 5300 VAC
RMS
? Small 6-Pin DIP Package
? Underwriters Lab File #E52744
? VDE 0884 Available with Option 1
Maximum Ratings
Emitter
Reverse Voltage ................................................ 6 V
Forward Current ........................................... 60 mA
Surge Current..................................................2.5 A
Power Dissipation.......................................100 mW
Derate from 25°C ................................1.33 mW/°C
Thermal Resistance..................................750°C/W
Detector
Peak Off-State Voltage ...................................600 V
Peak Reverse Voltage ....................................600 V
RMS On-State Current.................................300 mA
Single Cycle Surge............................................ 3 A
Total Power Dissipation ..............................500 mW
Derate from 25°C ..................................6.6 mW/°C
Thermal Resistance...................................150°C/W
Package
Storage Temperature................... –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Lead Soldering Temperature.............. 260°C/5 sec.
Isolation Test Voltage.........................5300 VACRMS


DESCRIPTION
The IL420 consists of a GaAs IRLED optically coupled to a photosensitive
non-zero crossing TRIAC network. The TRIAC consists of two
inverse parallel connected monolithic SCRs. These three semiconductors
are assembled in a six pin 0.3 inch dual in-line package, using high
insulation double molded, over/under leadframe construction.
High input sensitivity is achieved by using an emitter follower phototransistor
and a cascaded SCR predriver resulting in an LED trigger
current of less than 2 mA (DC).
The IL420 uses two discrete SCRs resulting in a commutating dV/dt of
greater than 10KV/ms. The use of a proprietary
dv/dt clamp
results in a
static dV/dt of greater than 10KV/ms. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1 and MT2
of the TRIAC. When conducting, the FET clamps the base of the phototransistor,
disabling the first stage SCR predriver.
The 600 V blocking voltage permits control of off-line voltages up to 240
VAC, with a safety factor of more than two, and is sufficient for as much
as 380 VAC.
The IL420 isolates low-voltage logic from 120, 240, and 380 VAC lines to
control resistive, inductive, or capacitive loads including motors, solenoids,
high current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial controls, office equipment,
and consumer appliances.

 

光耦的部分型號

產(chǎn)品名稱	型號規(guī)格	性能說明
光電耦合
	4N25	晶體管輸出
	4N25MC	晶體管輸出
	4N26	晶體管輸出
	4N27	晶體管輸出
	4N28	晶體管輸出
	4N29	達(dá)林頓輸出
	4N30	達(dá)林頓輸出
	4N31	達(dá)林頓輸出
	4N32	達(dá)林頓輸出
	4N33	達(dá)林頓輸出
	4N33MC	達(dá)林頓輸出
	4N35	達(dá)林頓輸出
	4N36	晶體管輸出
	4N37	晶體管輸出
	4N38	晶體管輸出
	4N39	可控硅輸出
	6N135	高速光耦晶體管輸出
	6N136	高速光耦晶體管輸出
	6N137	高速光耦晶體管輸出
	6N138	達(dá)林頓輸出
	6N139	達(dá)林頓輸出
	MOC3020	可控硅驅(qū)動輸出
	MOC3021	可控硅驅(qū)動輸出
	MOC3023	可控硅驅(qū)動輸出
	MOC3030	可控硅驅(qū)動輸出
	MOC3040	過零觸發(fā)可控硅輸出
	MOC3041	過零觸發(fā)可控硅輸出
	MOC3061	過零觸發(fā)可控硅輸出
	MOC3081	過零觸發(fā)可控硅輸出
	TLP521-1	單光耦
	TLP521-2	雙光耦
	TLP521-4	四光耦
	TLP621	四光耦
	TIL113	達(dá)林頓輸出
	TIL117	TTL邏輯輸出
	PC814	單光耦
	PC817	單光耦
	H11A2	晶體管輸出
	H11D1	高壓晶體管輸出
	H11G2	電阻達(dá)林頓輸出